TSUPREM-4 : Akio KITAGAWA

CMOS Process

TSUPREM4入力ファイルの説明

記述例	説明
$ TMA TSUPREM-4 p-well CMOS process input file $ $ $ 1st Process Module $ $ Output Device > PS or X OPTION DEVICE=X $ Specify the grid LINE X LOCATION=-10.0 SPACING=0.4 LINE X LOCATION=-7.0 SPACING=0.08 LINE X LOCATION=-5.0 SPACING=0.04 LINE X LOCATION=-4.0 SPACING=0.04 LINE X LOCATION=-2.0 SPACING=0.08 LINE X LOCATION=0.0 SPACING=0.4 LINE X LOCATION=2.0 SPACING=0.08 LINE X LOCATION=4.0 SPACING=0.04 LINE X LOCATION=5.6 SPACING=0.04 LINE X LOCATION=7.6 SPACING=0.08 LINE X LOCATION=9.0 SPACING=0.4 LINE Y LOCATION=0 SPACING=0.04 LINE Y LOCATION=0.5 SPACING=0.1 LINE Y LOCATION=1.5 SPACING=0.2 LINE Y LOCATION=3.0 SPACING=0.5 $ Initialize INITIALIZE <100> PHOSPHORUS=1E16 $ Plot the initial mesh SELECT TITLE="Initial Mesh" PLOT.2D GRID Y.MIN=-3.0 $ Save initial mesh SAVEFILE OUT.FILE=str0 $ Initial oxide mask and pad oxidation DEPOSIT OXIDE THICKNESS=0.50 SPACES=2 ETCH OXIDE START X=-9.0 Y=0.0 ETCH CONTINUE X=0.0 Y=0.0 ETCH CONTINUE X=0.0 Y=-0.7 ETCH DONE X=-9.0 Y=-0.7 DIFFUSE TEMP=1000 TIME=50 DRYO2 $ P-well implant IMPLANT BORON DOSE=1E13 ENERGY=45 $ Save p-well implant SAVEFILE OUT.FILE=str1-1 $ P-well drive DIFFUSE TEMP=1100 TIME=360 DRYO2 PRESS=0.02 $ Save structure 1 SAVEFILE OUT.FILE=str1-2 $ $ 2nd Process Module $ $ p+ field implant pattern DEPOSIT PHOTORES THICKNESS=1.2 ETCH PHOTORES LEFT P1.X=-7 ETCH PHOTORES RIGHT P1.X=-2 $ p+ Field implant IMPLANT BORON DOSE=1E14 ENERGY=40 ETCH PHOTORES ALL $ Remove oxide mask and form new oxide and nitride ETCH OXIDE All DIFFUSE TEMP=1000 TIME=50 DRYO2 DEPOSIT NITRIDE THICKNESS=0.2 $ Pattern active layer ETCH NITRIDE LEFT P1.X=-7.1 ETCH NITRIDE START X=-1.9 Y=0.0 ETCH CONTINUE X=1.9 Y=0.0 ETCH CONTINUE X=1.9 Y=-1.0 ETCH DONE X=-1.9 Y=-1.0 ETCH NITRIDE RIGHT P1.X=7.7 $ n+ Field implant mask covering the well DEPOSIT PHOTORES THICKNESS=1.0 ETCH PHOTORES LEFT P1.X=-9.6 ETCH PHOTORES RIGHT P1.X=0.6 $ n+ Field implant IMPLANT PHOSPHORUS DOSE=1E13 ENERGY=80 ETCH PHOTORES ALL $ Save active pattern structure SAVEFILE OUT.FILE=str2 $ $ 3rd Process Module $ $ LOCOS Process DIFFUSE TEMP=1000 TIME=240 WETO2 $ Etch to remove the nitride ETCH NITRIDE ALL $ Mask n-ch active DEPOSIT PHOTORES THICKNESS=1.0 ETCH PHOTOEWS RIGHT P1.X=0.0 $ Vth adjust implant for p-ch IMPLANT PHOSPHORUS ENERGY=80 DOSE=5E11 $ Mask p-ch active DEPOSIT PHOTORES THICKNESS=1.0 ETCH PHOTOEWS LEFT P1.X=0.0 $ Vth adjust implant for n-ch IMPLANT BORON ENERGY=30 DOSE=5E12 $ Ash photoresist ETCH PHOTORES ALL $ Print oxide and silicon thicknesses PRINT.1D X.VALUE=-3.5 LAYERS PRINT.1D X.VALUE=3.8 LAYERS $ Save LOCOS structure SAVEFILE OUT.FILE=str3 $ Etch oxide ETCH OXIDE TRAP THICK=0.08 $ Gate oxidation DIFFUSE TEMP=950 TIME=46 DRYO2 $ Poly deposition DEPOSIT POLYSILICON THICKNESS=0.3 DIVISIONS=4 $ Poly gate pattern ETCH POLY LEFT P1.X=-5.0 ETCH POLY START X=-4.0 Y=1.0 ETCH CONTINUE X=4.0 Y=1.0 ETCH CONTINUE X=4.0 Y=-1.0 ETCH DONE X=-4.0 Y=-1.0 ETCH POLY RIGHT P1.X=5.6 $ Save poly-Si gate structure SAVEFILE OUT.FILE=str4 $ $ 5th Process Module $ $ Remove oxide by dry etch (trapezoidal) ETCH OXIDE TRAP THICK=0.04 $ Deposit a thin layer of oxide DEPOSIT OXIDE THICKNESS=0.02 $ p-ch mask DEPOSIT PHOTORES THICKNESS=1.2 ETCH PHOTORES LEFT P1.X=0.0 $ LDD implant n-type S,D IMPLANT PHOS ENERGY=50 DOSE=5E13 IMPL.TAB=PHOSPHORUS $ Save n-ch LDD structure SAVEFILE OUT.FILE=str5 $ $ 6th Process Module $ $ LDD mask ash ETCH PHOTORES ALL $ n-ch mask DEPOSIT PHOTORES THICKNESS=1.2 ETCH PHOTORES RIGHT P1.X=0.0 $ LDD implant p-type S,D IMPLANT BORON ENERGY=30 DOSE=5E13 IMPL.TAB=BORON $ Save p-ch LDD structure SAVEFILE OUT.FILE=str6 $ $ 7th Process Module $ $ LDD mask ash ETCH PHOTORES ALL $ LTO DEPOSIT OXIDE THICK=0.2 $ Establish a sidewall spacer with dry etch ETCH OXIDE TRAP THICK=0.22 $ Save Sidewall structure SAVEFILE OUT.FILE=str7 $ $ 8th Process Module $ $ p-ch mask DEPOSIT PHOTORES THICKNESS=1.2 ETCH PHOTORES LEFT P1.X=0.0 $ n+ Source/drain implant IMPLANT ARSENIC ENERGY=100 DOSE=2E15 ETCH PHOTORES All $ n-ch mask DEPOSIT PHOTORES THICKNESS=1.2 ETCH PHOTORES RIGHT P1.X=0.0 $ p+ Source/drain implant IMPLANT BF2 ENERGY=30 DOSE=1E15 ETCH PHOTORES All $ Save S/D implant structure SAVEFILE OUT.FILE=str8 $ $ 9th Process Module $ $ Oxide etch ETCH OXIDE TRAP THICK=0.1 $ Use an oxidation model that understands polysilicon METHOD COMPRESS $ Source/drain reoxidation (including the polysilicon gate) DIFFUSE TEMP=900 TIME=30 DRYO2 $ BPSG -- etch to open windows for aluminum contact DEPOSIT OXIDE THICK=0.3 $ Contact hole pattern ETCH OXIDE START X=-5.8 Y=-1 ETCH CONTINUE X=-6.3 Y=-1 ETCH CONTINUE X=-6.3 Y=1 ETCH DONE X=-5.8 Y=1 ETCH OXIDE START X=-3.2 Y=-1 ETCH CONTINUE X=-2.7 Y=-1 ETCH CONTINUE X=-2.7 Y=1 ETCH DONE X=-3.2 Y=1 ETCH OXIDE START X=2.7 Y=-1 ETCH CONTINUE X=3.2 Y=-1 ETCH CONTINUE X=3.2 Y=1 ETCH DONE X=2.7 Y=1 ETCH OXIDE START X=6.4 Y=-1 ETCH CONTINUE X=6.9 Y=-1 ETCH CONTINUE X=6.9 Y=1 ETCH DONE X=6.4 Y=1 $ Save Contact Hale structure SAVEFILE OUT.FILE=str9 $ $ 10th Process Module $ $ Metallization -- etch to create a source contact DEPOSIT ALUMINUM THICK=0.5 SPACES=3 DEPOSIT PHOTORESIST THICK=1.0 $ Metal pattern ETCH PHOTORESIST LEFT P1.X=-9.5 ETCH PHOTORESIST START X=-3.8 Y=0 ETCH CONTINUE X=-5.2 Y=0 ETCH CONTINUE X=-5.2 Y=-3 ETCH DONE X=-3.8 Y=-3 ETCH PHOTORESIST START X=3.8 Y=0 ETCH CONTINUE X=5.8 Y=0 ETCH CONTINUE X=5.8 Y=-3 ETCH DONE X=3.8 Y=-3 ETCH PHOTORESIST RIGHT P1.X=8.8 ETCH ALUMINUM TRAP ANGLE=75 THICK=0.8 ETCH PHOTORESIST ALL $ Final structure SELECT TITLE="Final Structure" PLOT.2D BOUNDARY Y.MIN=-3.0 SELECT Z=LOG10(BORON) COLOR MIN.V=16 MAX.V=16.9 COLOR=3 COLOR MIN.V=16.9 MAX.V=23 COLOR=7 SELECT Z=LOG10(PHOSPHORUS+ARSENIC) COLOR MIN.V=17 MAX.V=23 COLOR=5 COLOR POLYSILI COLOR=6 COLOR OXIDE COLOR=4 COLOR ALUMINUM COLOR=9 PLOT.2D ^AX ^CL $ Save Final structure SAVEFILE OUT.FILE=strA

記述例

説明

$ TMA TSUPREM-4 p-well CMOS process input file
$
$
$ 1st Process Module
$


$ Output Device > PS or X
OPTION     DEVICE=X

$ Specify the grid
LINE       X LOCATION=-10.0 SPACING=0.4
LINE       X LOCATION=-7.0 SPACING=0.08
LINE       X LOCATION=-5.0 SPACING=0.04
LINE       X LOCATION=-4.0 SPACING=0.04
LINE       X LOCATION=-2.0 SPACING=0.08
LINE       X LOCATION=0.0 SPACING=0.4
LINE       X LOCATION=2.0 SPACING=0.08
LINE       X LOCATION=4.0 SPACING=0.04
LINE       X LOCATION=5.6 SPACING=0.04
LINE       X LOCATION=7.6 SPACING=0.08
LINE       X LOCATION=9.0 SPACING=0.4

LINE       Y LOCATION=0 SPACING=0.04
LINE       Y LOCATION=0.5 SPACING=0.1
LINE       Y LOCATION=1.5 SPACING=0.2
LINE       Y LOCATION=3.0 SPACING=0.5

$ Initialize  
INITIALIZE <100> PHOSPHORUS=1E16

$ Plot the initial mesh
SELECT     TITLE="Initial Mesh"
PLOT.2D    GRID Y.MIN=-3.0

$ Save initial mesh
SAVEFILE OUT.FILE=str0

$ Initial oxide mask and pad oxidation
DEPOSIT    OXIDE THICKNESS=0.50 SPACES=2
ETCH       OXIDE START X=-9.0 Y=0.0
ETCH             CONTINUE X=0.0 Y=0.0
ETCH             CONTINUE X=0.0 Y=-0.7
ETCH             DONE  X=-9.0 Y=-0.7
DIFFUSE    TEMP=1000 TIME=50 DRYO2

$ P-well implant
IMPLANT    BORON  DOSE=1E13  ENERGY=45

$ Save p-well implant
SAVEFILE OUT.FILE=str1-1

$ P-well drive
DIFFUSE    TEMP=1100  TIME=360  DRYO2  PRESS=0.02

$ Save structure 1
SAVEFILE   OUT.FILE=str1-2


$
$ 2nd Process Module
$

$ p+ field implant pattern
DEPOSIT     PHOTORES THICKNESS=1.2
ETCH        PHOTORES LEFT P1.X=-7 
ETCH        PHOTORES RIGHT P1.X=-2

$ p+ Field implant
IMPLANT    BORON  DOSE=1E14  ENERGY=40
ETCH       PHOTORES ALL

$ Remove oxide mask and form new oxide and nitride
ETCH       OXIDE All
DIFFUSE    TEMP=1000 TIME=50 DRYO2
DEPOSIT    NITRIDE THICKNESS=0.2

$ Pattern active layer
ETCH        NITRIDE LEFT P1.X=-7.1
ETCH        NITRIDE START X=-1.9 Y=0.0
ETCH                CONTINUE X=1.9 Y=0.0
ETCH                CONTINUE X=1.9 Y=-1.0
ETCH                DONE X=-1.9 Y=-1.0
ETCH        NITRIDE RIGHT P1.X=7.7

$ n+ Field implant mask covering the well
DEPOSIT    PHOTORES THICKNESS=1.0
ETCH       PHOTORES LEFT P1.X=-9.6
ETCH       PHOTORES RIGHT P1.X=0.6

$ n+ Field implant
IMPLANT    PHOSPHORUS  DOSE=1E13  ENERGY=80
ETCH       PHOTORES ALL

$ Save active pattern structure
SAVEFILE OUT.FILE=str2


$
$ 3rd Process Module
$

$ LOCOS Process
DIFFUSE    TEMP=1000  TIME=240  WETO2

$ Etch to remove the nitride
ETCH       NITRIDE ALL

$ Mask n-ch active
DEPOSIT    PHOTORES THICKNESS=1.0
ETCH       PHOTOEWS RIGHT P1.X=0.0

$ Vth adjust implant for p-ch
IMPLANT    PHOSPHORUS  ENERGY=80 DOSE=5E11

$ Mask p-ch active
DEPOSIT    PHOTORES THICKNESS=1.0
ETCH       PHOTOEWS LEFT P1.X=0.0

$ Vth adjust implant for n-ch
IMPLANT    BORON ENERGY=30 DOSE=5E12

$ Ash photoresist
ETCH       PHOTORES ALL

$ Print oxide and silicon thicknesses
PRINT.1D   X.VALUE=-3.5  LAYERS 
PRINT.1D   X.VALUE=3.8   LAYERS

$ Save LOCOS structure
SAVEFILE OUT.FILE=str3

$ Etch oxide
ETCH       OXIDE  TRAP  THICK=0.08

$ Gate oxidation
DIFFUSE    TEMP=950  TIME=46  DRYO2

$ Poly deposition
DEPOSIT    POLYSILICON  THICKNESS=0.3  DIVISIONS=4

$ Poly gate pattern 
ETCH       POLY   LEFT  P1.X=-5.0
ETCH       POLY   START X=-4.0 Y=1.0
ETCH              CONTINUE X=4.0 Y=1.0
ETCH              CONTINUE X=4.0 Y=-1.0
ETCH              DONE  X=-4.0 Y=-1.0
ETCH       POLY   RIGHT P1.X=5.6

$ Save poly-Si gate structure
SAVEFILE OUT.FILE=str4


$
$ 5th Process Module 
$


$ Remove oxide by dry etch (trapezoidal)
ETCH       OXIDE  TRAP  THICK=0.04

$ Deposit a thin layer of oxide
DEPOSIT    OXIDE  THICKNESS=0.02

$ p-ch mask
DEPOSIT    PHOTORES THICKNESS=1.2
ETCH       PHOTORES LEFT P1.X=0.0

$ LDD implant n-type S,D 
IMPLANT    PHOS  ENERGY=50  DOSE=5E13  IMPL.TAB=PHOSPHORUS

$ Save n-ch LDD structure
SAVEFILE OUT.FILE=str5


$
$ 6th Process Module 
$

$ LDD mask ash
ETCH       PHOTORES ALL

$ n-ch mask
DEPOSIT    PHOTORES THICKNESS=1.2
ETCH       PHOTORES RIGHT P1.X=0.0

$ LDD implant p-type S,D
IMPLANT    BORON  ENERGY=30  DOSE=5E13  IMPL.TAB=BORON

$ Save p-ch LDD structure
SAVEFILE OUT.FILE=str6


$
$ 7th Process Module 
$

$ LDD mask ash
ETCH       PHOTORES ALL

$ LTO
DEPOSIT    OXIDE  THICK=0.2
 
$ Establish a sidewall spacer with dry etch
ETCH       OXIDE  TRAP  THICK=0.22

$ Save Sidewall structure
SAVEFILE OUT.FILE=str7


$
$ 8th Process Module 
$

$ p-ch mask
DEPOSIT    PHOTORES THICKNESS=1.2
ETCH       PHOTORES LEFT P1.X=0.0

$ n+ Source/drain implant
IMPLANT    ARSENIC  ENERGY=100  DOSE=2E15
ETCH       PHOTORES All

$ n-ch mask
DEPOSIT    PHOTORES THICKNESS=1.2
ETCH       PHOTORES RIGHT P1.X=0.0

$ p+ Source/drain implant
IMPLANT    BF2  ENERGY=30  DOSE=1E15
ETCH       PHOTORES All

$ Save S/D implant structure
SAVEFILE OUT.FILE=str8

$
$ 9th Process Module 
$

$ Oxide etch
ETCH       OXIDE  TRAP  THICK=0.1

$ Use an oxidation model that understands polysilicon
METHOD     COMPRESS

$ Source/drain reoxidation (including the polysilicon gate)
DIFFUSE    TEMP=900  TIME=30  DRYO2 

$ BPSG -- etch to open windows for aluminum contact
DEPOSIT    OXIDE  THICK=0.3

$ Contact hole pattern
ETCH       OXIDE  START X=-5.8 Y=-1
ETCH              CONTINUE X=-6.3 Y=-1
ETCH              CONTINUE X=-6.3 Y=1
ETCH              DONE  X=-5.8 Y=1

ETCH       OXIDE  START X=-3.2 Y=-1
ETCH              CONTINUE X=-2.7 Y=-1
ETCH              CONTINUE X=-2.7 Y=1
ETCH              DONE  X=-3.2 Y=1

ETCH       OXIDE  START X=2.7 Y=-1
ETCH              CONTINUE X=3.2 Y=-1
ETCH              CONTINUE X=3.2 Y=1
ETCH              DONE  X=2.7 Y=1

ETCH       OXIDE  START X=6.4 Y=-1
ETCH              CONTINUE X=6.9 Y=-1
ETCH              CONTINUE X=6.9 Y=1
ETCH              DONE  X=6.4 Y=1

$ Save Contact Hale structure
SAVEFILE OUT.FILE=str9


$
$ 10th Process Module 
$

$ Metallization -- etch to create a source contact
DEPOSIT    ALUMINUM  THICK=0.5  SPACES=3
DEPOSIT    PHOTORESIST THICK=1.0

$ Metal pattern
ETCH       PHOTORESIST    LEFT   P1.X=-9.5

ETCH       PHOTORESIST    START X=-3.8 Y=0
ETCH                      CONTINUE X=-5.2 Y=0
ETCH                      CONTINUE X=-5.2 Y=-3
ETCH                      DONE  X=-3.8 Y=-3

ETCH       PHOTORESIST    START X=3.8 Y=0
ETCH                      CONTINUE X=5.8 Y=0
ETCH                      CONTINUE X=5.8 Y=-3
ETCH                      DONE X=3.8 Y=-3

ETCH       PHOTORESIST RIGHT  P1.X=8.8

ETCH       ALUMINUM  TRAP  ANGLE=75  THICK=0.8
ETCH       PHOTORESIST ALL

$ Final structure
SELECT     TITLE="Final Structure"
PLOT.2D    BOUNDARY Y.MIN=-3.0
SELECT     Z=LOG10(BORON)
COLOR      MIN.V=16 MAX.V=16.9 COLOR=3
COLOR      MIN.V=16.9 MAX.V=23 COLOR=7
SELECT     Z=LOG10(PHOSPHORUS+ARSENIC)
COLOR      MIN.V=17 MAX.V=23 COLOR=5
COLOR      POLYSILI COLOR=6
COLOR      OXIDE COLOR=4
COLOR      ALUMINUM COLOR=9
PLOT.2D    ^AX ^CL

$ Save Final structure
SAVEFILE OUT.FILE=strA

Updated: