記述例 | 説明 |
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$ TMA TSUPREM-4 0.25um Silicidation Process $ $ FEB. 6, 1999. A. Kitagawa $ OPTION DEVICE=X $ $ Module 1 : Gate formation $ $ Initial mesh MESH GRID.FAC=0.5 MESH DY.SURF=0.03 LY.ACTIV=0.5 DY.ACTIV=0.1 $ Wafer definition INITIALIZE BORON=5.0E15 WIDTH=0.6 DX=0.1 $ Plot initial mesh SELECT TITLE="Initial Mesh" PLOT.2D SCALE GRID Y.MAX=0.3 $ Grow gate oxide DIFFUSION TIME=30 TEMP=850 HCL=4.0 DRYO2 $ Deposit and pattern gate DEPOSIT POLYSILI THICKNES=0.25 SPACES=5 DY=0.01 ETCH POLYSILI RIGHT P1.X=0.125 ETCH OXIDE RIGHT P1.x=0.125 $ Oxidize METHOD COMPRESS DIFFUSION TIME=30 TEMP=850 HCL=4.5 DRYO2 $ Plot sidewall oxide SELECT TITLE="Gate oxide" PLOT.2D SCALE Y.MAX=0.3 COLOR POLY COLOR=3 SELECT Z=LOG10(ARSENIC) FOREACH X ( 15 TO 20 ) CONTOUR VAL=@{X} COLOR=4 LINE=3 END COLOR OXIDE COLOR=5 $ Plot Module 1 mesh SELECT TITLE="Module 1 Mesh" PLOT.2D SCALE GRID Y.MAX=0.3 $ $ Module 2 : S/D formation $ $ LDD implant IMPLANT ARSENIC DOSE=5E13 ENERGY=30 IMPL.TAB=ARSENIC $ Form sidewall oxide DEPOSIT OXIDE THICKNESS=0.2 SPACES=2 $ Plot sidewall oxide SELECT TITLE="Sidewall Oxide" PLOT.2D SCALE Y.MAX=0.3 COLOR POLY COLOR=3 SELECT Z=LOG10(ARSENIC) FOREACH X ( 15 TO 20 ) CONTOUR VAL=@{X} COLOR=4 LINE=3 END COLOR OXIDE COLOR=5 $ Form sidewall spacer ETCH OXIDE TRAPEZOI THICKNESS=0.25 $ Plot sidewall spacer SELECT TITLE="Sidewall Spacer" PLOT.2D SCALE Y.MAX=0.3 COLOR POLY COLOR=3 SELECT Z=LOG10(ARSENIC) FOREACH X ( 15 TO 20 ) CONTOUR VAL=@{X} COLOR=4 LINE=3 END COLOR OXIDE COLOR=5 $ Heavy source/drain implant and anneal IMPLANT ARSENIC DOSE=1E15 ENERGY=50 IMPL.TAB=ARSENIC METHOD PD.TRANS DIFFUSION TIME=15 TEMP=900 DRYO2 $ Isotropic etch to clear gate and source/drain ETCH OXIDE TRAP THICK=0.015 ANGLE=45 $ Plot S/D implant structure SELECT TITLE="Source, Drain Implantation" PLOT.2D SCALE Y.MAX=0.3 COLOR POLY COLOR=3 SELECT Z=LOG10(ARSENIC) FOREACH X ( 15 TO 20 ) CONTOUR VAL=@{X} COLOR=4 LINE=3 END COLOR OXIDE COLOR=5 $ Plot Module 2 mesh SELECT TITLE="Module 2 Mesh" PLOT.2D SCALE GRID Y.MAX=0.3 $ $ Module 3 : Salicide process $ $ Deposit titanium DEPOSIT MAT=TITANIUM THICK=0.02 SPACES=2 $ Plot structure before silicidation SELECT TITLE="Titanium Layer" PLOT.2D SCALE Y.MAX=0.3 COLOR POLY COLOR=3 SELECT Z=LOG10(ARSENIC) FOREACH X ( 15 TO 20 ) CONTOUR VAL=@{X} COLOR=4 LINE=3 END COLOR MAT=TITANIUM COLOR=2 COLOR MAT=TISI2 COLOR=6 COLOR OXIDE COLOR=5 PLOT.2D ^AX ^CL $ Grow the silicide METHOD PD.FERMI DIFFUSION TIME=1.2 TEMP=650 $ Plot structure after silicidation SELECT TITLE="After Silicidation" PLOT.2D SCALE Y.MAX=0.3 COLOR POLY COLOR=3 SELECT Z=LOG10(ARSENIC) FOREACH X ( 15 TO 20 ) CONTOUR VAL=@{X} COLOR=4 LINE=3 END COLOR MAT=TITANIUM COLOR=2 COLOR MAT=TISI2 COLOR=6 COLOR OXIDE COLOR=5 PLOT.2D ^AX ^CL $ Final structure ETCH MAT=TITANIUM ALL STRUCTURE REFLECT LEFT $ Plot structure after silicidation SELECT TITLE="After Titanium Etch" PLOT.2D SCALE Y.MAX=0.3 COLOR POLY COLOR=3 SELECT Z=LOG10(ARSENIC) FOREACH X ( 15 TO 20 ) CONTOUR VAL=@{X} COLOR=4 LINE=3 END COLOR MAT=TITANIUM COLOR=2 COLOR MAT=TISI2 COLOR=6 COLOR OXIDE COLOR=5 PLOT.2D ^AX ^CL $ Print layer information SELECT Z=DOPING PRINT.1D X.V=0.6 LAYERS PRINT.1D X.V=0.0 LAYERS $ Plot Module 3 mesh SELECT TITLE="Module 3 Mesh" PLOT.2D SCALE GRID Y.MAX=0.3 |
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