Self-Align Silicide Process

TSUPREM4入力ファイルの説明


記述例説明
$ TMA TSUPREM-4 0.25um Silicidation Process
$
$ FEB. 6, 1999. A. Kitagawa
$

OPTION   DEVICE=X

$
$ Module 1 : Gate formation
$

$ Initial mesh
MESH     GRID.FAC=0.5
MESH     DY.SURF=0.03  LY.ACTIV=0.5 DY.ACTIV=0.1

$ Wafer definition
INITIALIZE BORON=5.0E15  WIDTH=0.6 DX=0.1

$ Plot initial mesh
SELECT   TITLE="Initial Mesh"
PLOT.2D  SCALE GRID Y.MAX=0.3

$ Grow gate oxide
DIFFUSION TIME=30 TEMP=850 HCL=4.0 DRYO2

$ Deposit and pattern gate
DEPOSIT  POLYSILI  THICKNES=0.25 SPACES=5 DY=0.01
ETCH     POLYSILI  RIGHT P1.X=0.125
ETCH     OXIDE     RIGHT P1.x=0.125

$ Oxidize
METHOD   COMPRESS
DIFFUSION TIME=30 TEMP=850 HCL=4.5 DRYO2

$ Plot sidewall oxide
SELECT   TITLE="Gate oxide"
PLOT.2D  SCALE Y.MAX=0.3
COLOR    POLY COLOR=3
SELECT   Z=LOG10(ARSENIC)
FOREACH  X ( 15 TO 20 )
  CONTOUR  VAL=@{X} COLOR=4 LINE=3
END
COLOR    OXIDE    COLOR=5

$ Plot Module 1  mesh
SELECT   TITLE="Module 1 Mesh"
PLOT.2D  SCALE GRID Y.MAX=0.3


$
$ Module 2 : S/D formation
$

$ LDD implant
IMPLANT  ARSENIC  DOSE=5E13 ENERGY=30  IMPL.TAB=ARSENIC

$ Form sidewall oxide
DEPOSIT  OXIDE  THICKNESS=0.2 SPACES=2

$ Plot sidewall oxide
SELECT   TITLE="Sidewall Oxide"
PLOT.2D  SCALE Y.MAX=0.3
COLOR    POLY COLOR=3
SELECT   Z=LOG10(ARSENIC)
FOREACH  X ( 15 TO 20 )
  CONTOUR  VAL=@{X} COLOR=4 LINE=3
END
COLOR    OXIDE    COLOR=5

$ Form sidewall spacer
ETCH     OXIDE  TRAPEZOI THICKNESS=0.25

$ Plot sidewall spacer
SELECT   TITLE="Sidewall Spacer"
PLOT.2D  SCALE Y.MAX=0.3
COLOR    POLY COLOR=3
SELECT   Z=LOG10(ARSENIC)
FOREACH  X ( 15 TO 20 )
  CONTOUR  VAL=@{X} COLOR=4 LINE=3
END
COLOR    OXIDE    COLOR=5

$ Heavy source/drain implant and anneal
IMPLANT  ARSENIC  DOSE=1E15 ENERGY=50  IMPL.TAB=ARSENIC
METHOD   PD.TRANS
DIFFUSION TIME=15 TEMP=900 DRYO2

$ Isotropic etch to clear gate and source/drain
ETCH     OXIDE TRAP THICK=0.015 ANGLE=45

$ Plot S/D implant structure
SELECT   TITLE="Source, Drain Implantation"
PLOT.2D  SCALE Y.MAX=0.3
COLOR    POLY COLOR=3
SELECT   Z=LOG10(ARSENIC)
FOREACH  X ( 15 TO 20 )
  CONTOUR  VAL=@{X} COLOR=4 LINE=3
END
COLOR    OXIDE    COLOR=5

$ Plot Module 2 mesh
SELECT   TITLE="Module 2 Mesh"
PLOT.2D  SCALE GRID Y.MAX=0.3


$
$ Module 3 : Salicide process
$

$ Deposit titanium
DEPOSIT  MAT=TITANIUM  THICK=0.02 SPACES=2

$ Plot structure before silicidation
SELECT   TITLE="Titanium Layer"
PLOT.2D  SCALE Y.MAX=0.3
COLOR    POLY     COLOR=3
SELECT   Z=LOG10(ARSENIC)
FOREACH  X ( 15 TO 20 )
  CONTOUR  VAL=@{X} COLOR=4 LINE=3
END
COLOR    MAT=TITANIUM COLOR=2
COLOR    MAT=TISI2    COLOR=6
COLOR    OXIDE    COLOR=5
PLOT.2D  ^AX ^CL

$ Grow the silicide
METHOD   PD.FERMI
DIFFUSION TIME=1.2 TEMP=650

$ Plot structure after silicidation
SELECT   TITLE="After Silicidation"
PLOT.2D  SCALE Y.MAX=0.3
COLOR    POLY     COLOR=3
SELECT   Z=LOG10(ARSENIC)
FOREACH  X ( 15 TO 20 )
  CONTOUR  VAL=@{X} COLOR=4 LINE=3
END
COLOR    MAT=TITANIUM COLOR=2
COLOR    MAT=TISI2    COLOR=6
COLOR    OXIDE    COLOR=5
PLOT.2D  ^AX ^CL

$ Final structure
ETCH     MAT=TITANIUM ALL
STRUCTURE REFLECT LEFT

$ Plot structure after silicidation
SELECT   TITLE="After Titanium Etch"
PLOT.2D  SCALE Y.MAX=0.3
COLOR    POLY     COLOR=3
SELECT   Z=LOG10(ARSENIC)
FOREACH  X ( 15 TO 20 )
  CONTOUR  VAL=@{X} COLOR=4 LINE=3
END
COLOR    MAT=TITANIUM COLOR=2
COLOR    MAT=TISI2    COLOR=6
COLOR    OXIDE    COLOR=5
PLOT.2D  ^AX ^CL

$ Print layer information
SELECT Z=DOPING
PRINT.1D X.V=0.6 LAYERS
PRINT.1D X.V=0.0 LAYERS

$ Plot Module 3 mesh
SELECT   TITLE="Module 3 Mesh"
PLOT.2D  SCALE GRID Y.MAX=0.3


Updated: